ABSTRACT
Hafnium oxide mixed tantalum oxide (HTO) and Zirconium oxide mixed tantalum oxide (ZTO) layers were deposited on chemically cleaned p-Si substrate using RF magnetron sputtering technique. The oxide/Si stacks were annealed in oxygen for 30 minutes at 400 °C as on initial investigation. Both composition and structural properties were absolutely interesting to move further for electrical measurements. In continuation, metal-oxide-semiconductor devices were fabricated with aluminum gate electrode. ZTO devices showed attractive dielectric and electrical properties, relatively when compare with HTO devices, it could be due to the electrical, chemical and thermal properties of ZTO layer with Si, resulting good interface at ZTO/Si stack.
