ABSTRACT
A comprehensive numerical analysis has been accomplished for ZnO system based double heterostructure visible light emitting diode (LED) with superior electrical and optical performances. The optimized device with thin active region of CdZnO layer having 15% composition emits bluish electroluminescence around 430 nm, at room temperature with device internal quantum efficiency (IQE) of ~70% at anode current 0.22A. Rigorous theoretical investigation has been performed for the device parameter optimization; more specifically optimization of device barriers and cap layers along with active region. The optimization involves thickness, doping, and alloy composition calibrations of various constituent layers. Different aspects of band gap engineering and confinement has been considered to identify the optimization criteria for the design of ZnO based LEDs.
