ABSTRACT
This paper presents the concept of ring oscillator design using CMOS thyristor techniques. They generate extremely low frequency signals. They are implemented in 180nm technology with 1.8 volt (or) 2.5 volt power supply and 0.8pF load capacitance. Conventional CMOS ring oscillator generates the frequency of the order of MHz. In order to generate low frequency signals CMOS thyristor technique is introduced. It generates the frequency of the order of Hz. To further reduce the frequency of the output waveform CMOS thyristor with current mirrors are introduced. They generate the frequency of the order of few Hz hence these are the proposed circuits. The power consumption of these proposed circuits are less when compared to the conventional CMOS ring oscillator.
