ABSTRACT
The present work focuses on the determination of light induced defects by using thermally stimulated currents (TSC) technique in glassy alloy of Se90Sb8Ag2, prepared by conventional melt quenching technique. Amorphous nature of sample was verified by XRD. Thin films of the present sample were prepared by vacuum thermal evaporation technique. For this, amorphous thin films are exposed to white light of intensity 15000 Lux at room temperature in the presence of vacuum (~ 10-2 Torr). TSC have been measured, before and after exposure of light in the temperature range 308 K to 378 K. From these measurements, the density of traps (Nt) has been calculated in exposed and unexposed samples. Results indicate that the density of traps increases with the increase of exposure time. The defect density increase with exposure time indicates that more and more defects are created as exposure time increases. Due to light soaking, number of dangling bonds may increase due to breaking of covalent bonds which increases the density of defect states.
