ABSTRACT
Single crystals of p-type WS2 and WS1.9 have been grown by a Physical Vapour Transport (PVT) technique. DC electrical resistivity measurements have been made along the c-axis in both these crystals. Electron microscopic examinations revealed the presence of large concentration of defects in these crystals. The observations described in this paper clearly indicate how far two dimensional these layered crystals can be considered.
