ABSTRACT
This article reports the hydrogen storage characteristics of Mg-Based Mn thin film. The Mg-Mn thin films prepared using thermal evaporation method at pressure 10-5torr. The deposited films were annealed in vacuum at constant temperature 500K for one hour to get a homogeneous structure. Annealed thin films have been separately hydrogenated at different hydrogen pressure (20-60 psi) for 30 min. these films have been characterized and Optical band gap has been found to be increase with hydrogenation; it may be due to hydrogen accumulation at interface. Pristine film shows ohmic behavior and after annealing it shows semiconductor nature and also the conductivity of thin films has been found to be decreased due to hydrogenation because hydrogen takes electron from conduction band of metal as anionic model. Concluded the enhanced hydrogen affinity at the film substrate interface and suggested the study of complex hydride formation in thin films might give valuable information for the use of these Mg-Mn structures for hydrogen storage as well as solar collector materials.
