ABSTRACT
Thin films deposition increased with the contact area of the cell components, which results in high fraction reactants. Thin films have high current density and cell efficiency obtained due to the transportation of ions throughout thin-film layers as compared to bulk materials. We have investigated the drain characteristics of metal-semiconductor thin film transistors. It consists of a metal contact layer and a semiconducting layer, which forms metal-semiconductor junction. The top gated metal layer is deposited for conduction of charge carriers which flows from source to drain and controlled with Schottky metal gate. The channel control has been obtained by varying the width of depletion layer by depositing different thickness of conducting channel of selenium and Tellurium layer and the flow of current between source and drain. The metal gate electrodes have been directly deposited on the selenium and Tellurium channel without any insulating layer, because of the formation of Schottky barrier at the interface of metal and semiconductor. It has also investigated that observed drain characteristics shows similar behaviour for both semiconductor materials.
